The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.

The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.

The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.

This dissertation focuses on the study of spin-dependent transport in systems with strong spin-orbit coupling within their band structure. In particular we focus on the anomalous Hall effect, the spin Hall effect, and the Aharonov-Casher effect whose origins, are linked to the presence of spin-orbit coupling. Given the theoretical controversy surrounding these effects we further simplify our studies to semiconductor systems where the band structure is much simpler than in metallic systems with heavy elements. To obtain finite analytical results we focus on reduced dimensions (two and one dimensions) which can be explored experimentally. To set the stage, we discuss the origins of the strong spin-orbit coupling in semiconductors deriving the effective interaction from the Dirac equation. We discuss in detail the skew scattering contribution to the anomalous Hall effect in two-dimensional systems, which is dominant for systems with low impurity concentrations, and find that it is reduced when the two chiral subbands are partially occupied in an electron gas and vanishes for a hole gas, regardless of the band filling. We also present calculations for all contributing mechanisms. We propose a device to test this prediction and study the crossover from the intrinsic to the extrinsic anomalous Hall effect. We calculate all contributions to the anomalous Hall effect in electron systems using the Kubo-Streda formalism. We find that all contributions vanish when both subbands are occupied and that the skew scattering contribution dominates when only the majority subband is occupied. We calculate the interference effects due to spin-orbit interaction in mesoscopic ring structures patterned from HgTe quantum wells related to the Aharonov-Casher effect and the spin Hall effect. We find that the transport properties are affected by the carrier density as well as the spin orbit interaction. We find that the conductivity is larger in hole gas systems. We also show that devices with inhomogenous spin orbit interaction exhibit an electrically controlled spin-flipping mechanism.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts