Semiconductor luminescence has been a rapidly expanding field over the last 50 years. This text reviews the whole subject of semiconductor luminescence in one volume.

This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time. Discusses and compares infrared, Raman, and photoluminescence methods Enables readers to choose the best method for a given problem Illustrates applications to help non-experts and industrial users, with answers to selected common problems Presents fundamentals with examples from the semiconductor literature without excessive abstract discussion Features equipment lists and discussion of techniques to help establish characterization laboratories

This volume, which comprises a collection of papers by leading Soviet researchers, is devoted to topics in the luminescence of semiconductors. An experimental check is made on a series of predictions of the theory of ionization domains. A new low-voltage luminescence of zinc sulfide is described and investigated and is found to be due to a high-frequency electrical instability. A detailed study of the electrical properties of the instability and of the characteristics of the emission testifies to the pre-breakdown character of the electroluminescence and to the acousto electrical nature of the instability. The luminescence excitation spectra of AIN crystals excited in the region of the fundamental absorption contain lines belonging to excitons and their phonon replicas. The symmetry of the electronic and vibrational transitions corresponding to parts of these lines is interpreted. The results of a study of the scattering of light by electron - hole drops in germanium are cited. The results are discussed on the basis of a theory of exciton condensation in which allowance is made for the diffusion of excitons toward the surface of the drops and for the surface tens ion of the electron - hole liquid. This volume will be of interest to a wide range of scientific workers, particularly those engaged in the study of luminescence and physics of semiconductors.

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud

This volume looks at optical spectroscopy of semiconductir nanostructures. Some of the topics it covers include: kingdom of nanostructures; quantum confinement in low-dimensional systems; resonant light reflection; and transmission and absorption.

Spectroscopic techniques are among the most powerful characterization methods used to study semiconductors. This volume presents reviews of a number of major spectroscopic techniques used to investigate bulk and artificially structured semiconductors including: photoluminescence, photo-reflectance, inelastic light scattering, magneto-optics, ultrafast work, piezo-spectroscopy methods, and spectroscopy at extremely low temperatures and high magnetic fields. Emphasis is given to major semiconductor systems, and artificially structured materials such as GaAs, InSb, Hg1-xCdxTe and MBE grown structures based upon GaAs/AlGaAs materials. Both the spectroscopic novice and the expert will benefit from the descriptions and discussions of the methods, principles, and applications relevant to today's semiconductor structures. Key Features* Discusses the latest advances in spectroscopic techniques used to investigate bulk and artificially structured semiconductors* Features detailed review articles which cover basic principles* Highlights specific applications such as the use of laser spectroscopy for the characterization of GaAs quantum well structures