This authoritative test introduces the basic aspects of diffusion phenomena and their methods of solution through physical examples. It emphasizes modeling and methodology, bridging the gap between physico chemical statements of certain kinetic processes and their reduction to diffusion problems. Author Richard Ghez draws upon his experience in the areas of metallurgy and semiconductor technology to present physically significant examples that will prove of interest to a wide range of scientists — physicists, chemists, biologists, and applied mathematicians. Prerequisites include a rigorous year of calculus and a semester of thermodynamics. The opening chapter on the diffusion equation is succeeded by chapters on steady-state examples, diffusion under external forces, and simple time-dependent examples. An introduction to similarity is followed by explorations of surface rate limitations and segregation, a user's guide to the Laplace transform, and further time-dependent examples.

Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

The Bulletin of the Atomic Scientists is the premier public resource on scientific and technological developments that impact global security. Founded by Manhattan Project Scientists, the Bulletin's iconic "Doomsday Clock" stimulates solutions for a safer world.

Developed from a symposium at the 203rd Meeting of the ACS in San Francisco, April 1992, this volume presents new information on advanced polymers for applications in the manufacture of electronic devices and systems. The 38 chapter-papers are organized in four sections: chemically amplified resists; top-surface imaging and dry development resists; electron-beam, X-ray, and photoresists; and polyimides and dielectric polymers. Annotation copyright by Book News, Inc., Portland, OR